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PD- 91850B IRF7220 HEXFET(R) Power MOSFET l l l l Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel S 1 8 A D D D D S S G 2 7 VDSS = -14V 3 6 4 5 RDS(on) = 0.012W T o p V ie w Description These P-Channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery and load management applications.. The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The package is designed for vapor phase, infra red, or wave soldering techniques. S O -8 Absolute Maximum Ratings Parameter VDS ID @ TA = 25C ID @ TA= 70C IDM PD @TA = 25C PD @TA = 70C EAS VGS TJ, TSTG Drain- Source Voltage Continuous Drain Current, VGS @ -4.5V Continuous Drain Current, VGS @ -4.5V Pulsed Drain Current Power Dissipation Power Dissipation Linear Derating Factor Single Pulse Avalanche Energy Gate-to-Source Voltage Junction and Storage Temperature Range Max. -14 11 8.8 88 2.5 1.6 0.02 110 12 -55 to + 150 Units V A W W/C mJ V C Thermal Resistance Parameter RqJA Maximum Junction-to-Ambient Max. 50 Units C/W www.irf.com 1 03/15/99 IRF7220 Electrical Characteristics @ TJ = 25C (unless otherwise specified) V(BR)DSS DV(BR)DSS/DTJ Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance RDS(on) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Min. -14 --- --- --- -0.60 8.4 --- --- --- --- --- --- --- --- --- --- --- --- --- --- Typ. Max. Units Conditions --- --- V VGS = 0V, ID = -5mA -0.006 --- V/C Reference to 25C, ID = -1mA .0082 0.012 VGS = -4.5V, ID = -11A W .0125 0.020 VGS = -2.5V, ID = -8.8A --- --- V VDS = VGS, ID = -250A --- --- S VDS = -10V, ID = -11A --- -5.0 VDS = -11.2V, VGS = 0V A --- -100 VDS = -11.2V, VGS = 0V, TJ = 70C --- -100 VGS = -12V nA --- 100 VGS = 12V 84 125 ID = -11A 13 20 nC VDS = -10V 37 55 VGS = -5.0V 19 --- VDD = -10V 420 --- ID = -11A ns 140 --- RG = 0.90W 1040 --- RD = 6.2W 8075 --- VGS = 0V 4400 --- pF VDS = -10V 4150 --- = 1.0MHz Source-Drain Ratings and Characteristics IS ISM VSD trr Qrr Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge Min. Typ. Max. Units --- --- --- --- --- --- --- --- 160 147 -2.5 A -88 -1.2 240 220 V ns nC Conditions MOSFET symbol showing the G integral reverse p-n junction diode. TJ = 25C, IS = -2.5A, VGS = 0V TJ = 25C, IF = -2.5A di/dt = 100A/s D S Notes: Repetitive rating; pulse width limited by max. junction temperature. When mounted on 1 inch square copper board, t<10 sec Starting TJ = 25C, L = 1.8mH RG = 25W , IAS = 11A. (See Figure 10) Pulse width 300s; duty cycle 2%. 2 www.irf.com IRF7220 80 VG S - 4 .5V - 4.0 V - 3.0 V - 2.0 V - 1.8 V - 1.6 V - 1.4 V BO TTO M - 1.2 V TO P 60 -I D , D rain-to -S ource C urrent (A ) -ID , D ra in-to-So urce C urre nt (A ) 50 60 VG S - 4.5 V - 4 .0V - 3 .0V - 2 .0V - 1 .8V - 1 .6V - 1 .4V B O TTOM - 1 .2V T OP 300s PULSE W IDTH TJ = 25C 40 40 300s PULSE W ID TH T J = 150C 30 20 20 10 -1.2V 0 0 2 4 6 8 -1.2V A 10 0 0 2 4 6 8 10 A -V D S , D rain-to -Sourc e Volta ge (V) -VD S , D rain-to-S ou rc e V oltag e (V ) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 1000 2.0 R DS(on) , Drain-to-Source On Resistance (Normalized) ID = -11A -I D , D rain-to -S ou rce C urre nt (A ) 1.5 100 TJ = 150C 1.0 T J = 25C 10 0.5 1 1.0 2.0 3.0 4.0 V DS = -10V 20 s P U LS E W ID TH 5.0 6.0 7.0 8.0 A 0.0 -60 -40 -20 VGS = -4.5V 0 20 40 60 80 100 120 140 160 -VG S , G a te -to -S ou rce V o lta ge (V ) TJ , Junction Temperature( C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature www.irf.com 3 IRF7220 10000 10 9000 -VGS , Gate-to-Source Voltage (V) V GS = C iss = C rss = C oss = 0V, f = 1kHz C gs + C gd , Cds SH ORTED C gd C ds + C gd ID = -11A VDS =-10V 8 C , C apacitance (pF ) C iss 8000 6 7000 4 6000 5000 C oss C rss 2 4000 1 10 A 0 0 20 40 60 80 100 120 -VD S , D rain-to-Sourc e Voltag e (V) QG , Total Gate Charge (nC) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 100 1000 -I S D , Rev erse D rain C u rrent (A) OPERATION IN THIS AREA LIMITED BY RDS(on) 10 TJ = 150C -ID , Drain Current (A) I 100 100us TJ = 25C 1 1ms 10 10ms 0.1 0.0 0.5 1.0 1.5 V G S = 0V 2.0 A 2.5 1 0.1 TA = 25 C TJ = 150 C Single Pulse 1 10 100 -VS D , S ource-to-D rain Voltage (V) -VDS , Drain-to-Source Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area 4 www.irf.com IRF7220 EAS , Single Pulse Avalanche Energy (mJ) 12 300 10 250 ID -4.9A -8.8A BOTTOM -11A TOP -ID , Drain Current (A) 8 200 6 150 4 100 2 50 0 25 50 75 100 125 150 0 25 50 75 100 125 150 TC , Case Temperature ( C) Starting T , Junction Temperature( C) J Fig 9. Maximum Drain Current Vs. Case Temperature Fig 10. Maximum Avalanche Energy Vs. Drain Current 100 Thermal Response (Z thJA ) D = 0.50 10 0.20 0.10 0.05 0.02 P DM t1 SINGLE PULSE (THERMAL RESPONSE) Notes: 1. Duty factor D = t 1 / t 2 2. Peak TJ = P DM x Z thJA + TA 0.001 0.01 0.1 1 10 100 t2 1 0.01 0.1 0.0001 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient www.irf.com 5 IRF7220 SO-8 Package Details D -B- D IM 5 IN C H ES M IN .0532 .0040 .014 .0075 .189 .150 MAX .0688 .0098 .018 .0098 .196 .157 M ILLIM E T ER S M IN 1.35 0.10 0.36 0.19 4.80 3.81 M AX 1.75 0.25 0.46 0.25 4.98 3.99 A 6 5 H 0.25 (.010) M q 5 8 E -A- 7 A1 B C D E e e1 H K 1 2 3 4 AM e 6X e1 A K x 45 .050 B A SIC .025 B A SIC .2284 .011 0.16 0 .2440 .019 .050 8 1.27 B A SIC 0.635 B A S IC 5.80 0.28 0.41 0 6.20 0.48 1.27 8 -CB 8X 0.25 (.010) N O TE S : A1 M CASBS 0.10 (.004) L 8X 6 C 8X L R E C O M M E N D E D F O O TP R IN T 0.72 (.028 ) 8X 1. D IM E N S IO N IN G A N D TO LE R A N C IN G P E R A N S I Y 14.5M -1982. 2. C O N T R O LLIN G D IM E N S IO N : IN C H . 3. D IM E N S IO N S A R E S H O W N IN M ILLIM E TE R S (IN C H E S ). 4. O U TLIN E C O N F O R M S TO JE D E C O U TLIN E M S -012A A . 5 D IM E N S IO N D O E S N O T IN C LU D E M O LD P R O TR U S IO N S M O LD P R O TR U S IO N S N O T TO E XC E E D 0.25 (.006). 6 D IM E N S IO N S IS TH E LE N G TH O F LE A D F O R S O LD E R IN G TO A S U B S TR A TE .. 6.46 ( .255 ) 1.78 (.070) 8X 1.27 ( .050 ) 3X Part Marking 6 www.irf.com IRF7220 Tape and Reel T E R M IN A L N U M B E R 1 1 2 .3 ( .48 4 ) 1 1 .7 ( .46 1 ) 8 .1 ( .3 1 8 ) 7 .9 ( .3 1 2 ) F E E D D IR E C T IO N N O TE S : 1 . C O N T R O L L IN G D IM E N SIO N : M IL L IM E TE R . 2 . A L L D IM E N S IO N S A R E S H O W N IN M IL L IM E TE R S (IN C H E S). 3 . O U TL IN E C O N F O R M S TO E IA -4 8 1 & E IA -5 4 1. 3 3 0 .0 0 (1 2 .9 92 ) M AX. 14 .4 0 ( .5 6 6 ) 12 .4 0 ( .4 8 8 ) NO TES : 1 . C O N T R O L L IN G D IM E N S IO N : M IL L IM E T E R . 2 . O U T L IN E C O N F O R M S T O E IA -48 1 & E IA -5 4 1 . WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331 IR GREAT BRITAIN: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020 IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111 IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086 IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 838 4630 IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673, Taiwan Tel: 886-2-2377-9936 http://www.irf.com/ Data and specifications subject to change without notice. 3/99 www.irf.com 7 |
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